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IXFH110N15T2 N-Channel MOSFET

IXFH110N15T2 Description

isc N-Channel MOSFET Transistor *.

IXFH110N15T2 Features

* Static drain-source on-resistance: RDS(on) ≤ 13mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFH110N15T2 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 480 W Tj Operating Junction Temperature -55

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Datasheet Details

Part number
IXFH110N15T2
Manufacturer
INCHANGE
File Size
334.49 KB
Datasheet
IXFH110N15T2-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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