IXFH110N25T Datasheet - IXYS Corporation

IXFH110N25T TrenchHV Power MOSFET HiPerFET

TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 69.

IXFH110N25T Features

* z z International standard package Avalanche rated 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 Advantages z z z Easy to mount Space savings High power density Applications z z z Symbol Test Conditions (TJ = 25°C unless otherwise specifie

IXFH110N25T_IXYSCorporation.pdf