Datasheet Specifications
- Part number
- IXFH110N25T
- Manufacturer
- IXYS Corporation
- File Size
- 156.94 KB
- Datasheet
- IXFH110N25T_IXYSCorporation.pdf
- Description
- TrenchHV Power MOSFET HiPerFET
Description
TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR .
Applications
* z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 V V z z z DC-DC converters Battery chargers Switched-IXFH110N25T Distributors
📁 Related Datasheet
📌 All Tags