IXFH110N25T Datasheet - IXYS Corporation

IXFH110N25T, TrenchHV Power MOSFET HiPerFET

TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR .

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IXFH110N25T_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH110N25T

Manufacturer:

IXYS Corporation

File Size:

156.94 KB

Description:

TrenchHV Power MOSFET HiPerFET

Applications

* z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 V V z z z DC-DC converters Battery chargers Switched-

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IXFH110N25T TrenchHV Power MOSFET HiPerFET IXYS Corporation

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