Datasheet Specifications
- Part number
- IXFM12N90
- Manufacturer
- ETC
- File Size
- 86.00 KB
- Datasheet
- IXFM12N90_ETC.pdf
- Description
- Power MOSFET
Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V.
Features
* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwisApplications
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays l l l l l l l l 10N90 12N90 13N90 Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages Easy to mount with 1IXFM12N90 Distributors
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