IXFM11N80 Datasheet - IXYS Corporation

IXFM11N80 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 V DSS 800 V 800 V I D25 11 A 13 A trr £ 250 ns R DS(on) 0.95 W 0.80 W Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD.

IXFM11N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Symbol VDSS VGS(th

IXFM11N80 Datasheet (665.40 KB)

IXFM11N80 Datasheet Preview — Preview of IXFM11N80 PDF

Datasheet Details

Part number:

IXFM11N80

Manufacturer:

IXYS Corporation

File Size:

665.40 KB

Description:

Power mosfet.

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IXFM11N80 Power MOSFET IXYS Corporation

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