* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFM6N100 Datasheet (76.37 KB)
IXFM6N100
IXYS
76.37 KB
Power mosfets.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A.
📁 Related Datasheet
IXFM6N90 Power MOSFETs (IXYS)
IXFM67N10 Power MOSFET (IXYS Corporation)
IXFM10N100 Power MOSFET (IXYS Corporation)
IXFM10N90 Power MOSFET (ETC)
IXFM10N90 Power MOSFETs (IXYS)
IXFM11N80 Power MOSFET (IXYS Corporation)
IXFM12N100 Power MOSFET (IXYS Corporation)
IXFM12N90 Power MOSFET (ETC)
IXFM12N90 Power MOSFETs (IXYS)
IXFM13N50 Power MOSFET (IXYS Corporation)
