IXFM6N100 Datasheet - IXYS

IXFM6N100 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A trr £ 250 ns R DS(on) 1.8 W 2.0 W Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TO-247 AD (IXFH) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C =.

IXFM6N100 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFM6N100 Datasheet (76.37 KB)