* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteri
IXFM10N100 Datasheet (1.11 MB)
IXFM10N100
IXYS Corporation
1.11 MB
Power mosfet.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
.
📁 Related Datasheet
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