Part number:
IXF18102
Manufacturer:
Intel Corporation
File Size:
136.89 KB
Description:
10gbps physical layer device.
* Features s Benefits s Two modes of operation: STS-192c/STM 64c POS STS-192c/STM 64c GFP SFI-4 Device is optimized to support POS and GFP at STS-192c/STM 64c s s SFI-4 is widely deployed as the interface for OC-192c/SDH 64c optics modules s SPI-4 Phase 2 s s s Helps minimize pin count an
IXF18102 Datasheet (136.89 KB)
IXF18102
Intel Corporation
136.89 KB
10gbps physical layer device.
📁 Related Datasheet
IXF18104 - 10 Gigabit Lan PHY
(Intel Corporation)
product brief
Intel IXF18104
®
10 Gigabit LAN PHY
..
Product Overview The Intel® IXF18104 is a highly integrated solution for 10Gb.
IXFA102N15T - Power MOSFET
(IXYS Corporation)
Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFA102N15T IXFH102N15T IXFP102N15T
VDSS ID25
RDS(on) trr
= 150V = .
IXFA102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXFA102N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt.
IXFA10N60P - Polar MOSFET
(IXYS Corporation)
Advance Technical Information
..
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IX.
IXFA10N80P - Power MOSFET
(IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P IXFP10N80P IXFQ10N80P IXF.
IXFA110N15T2 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchT2TM HiperFET Power MOSFET
IXFA110N15T2 IXFP110N15T2
VDSS = ID25 =
RDS(on)
150V 110A 13m
N-Channel Enh.
IXFA110N15T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXFA12N50P - Polar MOSFET
(IXYS Corporation)
Advance Technical Information
IXFA 12N50P IXFP 12N50P
PolarHVTM Power .. MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA 12.