Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 A 120 A 350 A TC = 25C TC = 25C
IXFP130N10T_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFA130N10T, IXFP130N10T
Manufacturer:
IXYS Corporation
File Size:
283.89 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFA130N10T, IXFP130N10T.
Please refer to the document for exact specifications by model.