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IXFA130N10T Datasheet - IXYS Corporation

Power MOSFET

IXFA130N10T Features

* Ultra-Low On Resistance

* Avalanche Rated

* Low Package Inductance - Easy to Drive and to Protect

* 175C Operating Temperature

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Automotive - Motor Drives -

IXFA130N10T Datasheet (283.89 KB)

Preview of IXFA130N10T PDF

Datasheet Details

Part number:

IXFA130N10T

Manufacturer:

IXYS Corporation

File Size:

283.89 KB

Description:

Power mosfet.
Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP13.

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IXFA130N10T Power MOSFET IXYS Corporation

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