IXFA10N60P, IXFP10N60P Datasheet - IXYS Corporation

IXFA10N60P Polar MOSFET

Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ .

IXFA10N60P Features

* z z z 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb.in. z 4 3 g g International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low pack

IXFP10N60P_IXYSCorporation.pdf