IXFA130N10T2, IXFP130N10T2 Datasheet - IXYS Corporation

IXFA130N10T2 - Power MOSFET

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ

IXFA130N10T2 Features

* International Standard Packages

* 175°C Operating Temperature

* High Current Handling Capability

* Fast Intrinsic Rectifier

* Dynamic dV/dt Rated

* Low R DS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* DC-DC Converters

IXFP130N10T2_IXYSCorporation.pdf