TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS,TJ
IXFP130N10T2_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFA130N10T2, IXFP130N10T2
Manufacturer:
IXYS Corporation
File Size:
313.53 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFA130N10T2, IXFP130N10T2.
Please refer to the document for exact specifications by model.