IXFN180N10 Power MOSFET

Description

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Co.

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Datasheet Specifications

Part number: IXFN180N10
Manufacturer: ETC
File Size: 84.33 KB
Datasheet: IXFN180N10_ETC.pdf
Description: Power MOSFET

Features

* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (U

Applications

* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= ±20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = 0.5
* ID25 Note 2 Characteristic Values Min. Typ. Max. 100 2 4

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IXFN180N10 Power MOSFET ETC

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