IXFN180N25T Datasheet (IXYS)

IXFN180N25T, Power MOSFET

Preliminary Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN180N25T VDSS = ID25 = RDS(on)  trr  250V 168A 12.9m 200ns miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C T

IXFN180N25T Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Isolation voltage 2500 V~

* High Current Handling Capability

* Fast Intrinsic Diode

* Avalanche Rated

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density