IXFN180N25T Power MOSFET

IXYS

IXFN180N25T Description

Preliminary Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN180N25T VDSS = ID25 =.

IXFN180N25T Features

* International Standard Package
* miniBLOC, with Aluminium Nitride Isolation
* Isolation voltage 2500 V~
* High Current Handling Capability
* Fast Intrinsic Diode
* Avalanche Rated
* Low RDS(on) Advantages
* Easy to Mount
* Space Savings
* High Power Density

IXFN180N25T Applications

* DC-DC Converters
* Battery Chargers
* Switched-Mode and Resonant-Mode Power Supplies
* DC Choppers
* AC Motor Drives
* Uninterruptible Power Supplies
* High Speed Power Switching Applications DS100130A(9/14) Symbol Test Conditions (TJ = 25C Unless Otherwise Specifie

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Datasheet Details

Part number: IXFN180N25T
Manufacturer: IXYS
File Size: 176.11 KB
Datasheet: IXFN180N25T_IXYS.pdf
Description: Power MOSFET

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