IXFN100N25 Datasheet - IXYS Corporation

IXFN100N25 N-Channel MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, V.

IXFN100N25 Features

* International standard package

* miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Sw

IXFN100N25 Datasheet (70.89 KB)

IXFN100N25 Datasheet Preview — Preview of IXFN100N25 PDF

Datasheet Details

Part number:

IXFN100N25

Manufacturer:

IXYS Corporation

File Size:

70.89 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IXFN100N20 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN100N10S1 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN100N10S2 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN100N10S3 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN100N50P Power MOSFET (IXYS Corporation)

IXFN100N50Q3 HiperFET Power MOSFET Q3-Class (IXYS Corporation)

IXFN100N65X2 Power MOSFET (IXYS)

IXFN102N30P Polar MOSFETs (IXYS Corporation)

IXFN106N20 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN110N60P3 Polar3 HiPerFET Power MOSFET (IXYS Corporation)

TAGS

IXFN100N25 N-Channel MOSFET IXYS Corporation

IXFN100N25 Distributor