IXFN120N20P Datasheet - IXYS

IXFN120N20P PolarHT Power MOSFET

Advanced Technical Information PolarHT Power MOSFET TM IXFN 120N20P N-Channel Enhancement Mode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 220 ns trr www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V.

IXFN120N20P Features

* W °C °C °C °C V~ z z z z z 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, t = 1 minute Mounting torque Terminal connection torque 300 2500 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 30 g International standard package Unclamped Inductive Switching (UIS) rated Low terminal inductance lOW Stray capacita

IXFN120N20P_IXYS.pdf