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IXFN140N20P - PolarHT HiPerFET Power MOSFET

Key Features

  • International Standard Package m.
  •  iniBLO C, with Aluminium Nitride Isolation.
  • Low Package Inductance.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density © 2022 Littelfuse, Inc. DS99245G(5/22) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 70A, Note 1 C iss Coss Crss td(on) tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz R.

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Full PDF Text Transcription for IXFN140N20P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFN140N20P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T...

View more extracted text
140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 200 V 200 V 20 V  30 V 115 A 280 A 60 A 4 J 10 V/ns 680 W -55 ... +175 C 175 C -55 ... +175 C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.

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