IXFN140N20P Description
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 175C TJ = 25C to 175C, RGS = 1M.
IXFN140N20P Key Features
- International Standard Package
- Low Package Inductance
- Avalanche Rated
- Low RDS(ON) and QG -Fast Intrinsic Diode
- Easy to Mount -Space Savings -High Power Density
- VDSS, ID = 70A RG = 3.3 (External)
- VDSS, ID = 70A
- Amperes
- Amperes