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IXFN120N20 - Power MOSFET

Key Features

  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • International standard package.
  • miniBLOC, with Aluminium nitride isolation.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 120N20 VDSS = ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L VISOL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque Maximum Ratings 200 V 200 V ±20 V ±30 V 120 A 480 A 120 A 64 mJ 3 J 5 V/ns 600 W -55 ...