Overview: HiPerFETTM Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 120N20 VDSS =
ID25 = = RDS(on) 200 V
120 A 17 mΩ trr ≤ 250 ns Symbol
VDSS VDGR VGS VGSM ID25 IDM I
AR
EAR EAS dv/dt
PD TJ TJM Tstg T
L
VISOL
Md
Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque Maximum Ratings 200 V 200 V ±20 V ±30 V 120 A 480 A 120 A 64 mJ 3 J 5 V/ns 600 W -55 ... +150 °C 150 °C -55 ... +150 °C - °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.
