• Part: IXFN120N20P
  • Description: PolarHT Power MOSFET
  • Manufacturer: IXYS
  • Size: 571.97 KB
Download IXFN120N20P Datasheet PDF
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Datasheet Summary

Advanced Technical Information PolarHT Power MOSFET IXFN 120N20P N-Channel Enhancement Mode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 220 ns trr .. Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 120 75 300 60 60 2.0 10 714 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ J V/ns miniBLOC SOT-227B (IXFN) E153432 S S D...