IXFN140N30P Description
+150 °C 300 °C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in.
IXFN140N30P Key Features
- Fast intrinsic diode
- Avalanche Rated
- Low RDS(ON) and QG
- Low package inductance
- Easy to mount
- Space savings
- High power density
- Part: IXFN140N30P
- Manufacturer: IXYS
- Size: 109.54 KB
Related IXYS Datasheets
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|---|---|
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