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IXFN140N30P - Power MOSFET

Key Features

  • Fast intrinsic diode.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low package inductance Advantages.
  • Easy to mount.
  • Space savings.
  • High power density.

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Full PDF Text Transcription for IXFN140N30P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFN140N30P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N30P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ T...

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140N30P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s Maximum Ratings 300 V 300 V ±20 V ± 30 V 110 A 100 A 300 A 70 A 5 J 20 V/ns 700 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.