IXFN140N20P Datasheet - IXYS

IXFN140N20P PolarHT HiPerFET Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings .

IXFN140N20P Features

* International Standard Package m

*  iniBLO C, with Aluminium Nitride Isolation

* Low Package Inductance

* Avalanche Rated

* Low RDS(ON) and QG

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

IXFN140N20P_IXYS.pdf

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Datasheet Details

Part number:

IXFN140N20P

Manufacturer:

IXYS

File Size:

574.74 KB

Description:

Polarht hiperfet power mosfet.

IXFN140N20P Distributor

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IXFN140N20P IXFN140N20P PolarHT HiPerFET Power MOSFET IXYS