IXFN140N30P Datasheet (IXYS)

IXFN140N30P, Power MOSFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N30P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting to

IXFN140N30P Features

* Fast intrinsic diode

* Avalanche Rated

* Low RDS(ON) and QG

* Low package inductance Advantages

* Easy to mount

* Space savings

* High power density Applications

* DC-DC coverters

* Battery chargers

* Switched-mode and