* Fast intrinsic diode
* Avalanche Rated
* Low RDS(ON) and QG
* Low package inductance Advantages
* Easy to mount
* Space savings
* High power density Applications
* DC-DC coverters
* Battery chargers
* Switched-mode and
IXFN140N30P Datasheet (109.54 KB)
IXFN140N30P
IXYS
109.54 KB
Power mosfet.
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN140N30P
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS ID.
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