IXFN100N50P Datasheet - IXYS Corporation

IXFN100N50P Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V 90 A 49 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ .

IXFN100N50P Features

* International standard package

* Encapsulating epoxy meets www.DataSheet4U.net 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤1 mA t=1s Mounting torque Terminal connection torque SOT-227B 300 2500 3000 UL 94 V-0, flammability classification isolation Fast

IXFN100N50P_IXYSCorporation.pdf