IXFN100N50P Power MOSFET

IXYS Corporation

Description

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 100N50P VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V .

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Datasheet Specifications

Part number: IXFN100N50P
Manufacturer: IXYS Corporation
File Size: 134.49 KB
Datasheet: IXFN100N50P_IXYSCorporation.pdf
Description: Power MOSFET

Features

* International standard package
* Encapsulating epoxy meets www. DataSheet4U. net 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤1 mA t=1s Mounting torque Terminal connection torque SOT-227B 300 2500 3000 UL 94 V-0, flammability classification isolation Fast

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IXFN100N50P Power MOSFET IXYS Corporation

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