IXFN100N50Q3 Datasheet - IXYS Corporation

IXFN100N50Q3 HiperFET Power MOSFET Q3-Class

Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 82A 49mΩ 250ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 2.

IXFN100N50Q3 Features

* z z z S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsi

IXFN100N50Q3 Datasheet (144.94 KB)