Datasheet Details
- Part number
- IXFN100N20
- Manufacturer
- IXYS Corporation
- File Size
- 135.56 KB
- Datasheet
- IXFN100N20_IXYSCorporation.pdf
- Description
- HiPerFET Power MOSFETs
IXFN100N20 Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 2.IXFN100N20 Features
* International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier lIXFN100N20 Applications
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q Advantages Easy to mount Space savings High power density q q q IXYS reserves the right to change limits, test c
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