IXFN110N85X Datasheet - IXYS

IXFN110N85X - Power MOSFET

X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN110N85X D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Max.

IXFN110N85X Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Isolation Voltage 2500V~

* High Current Handling Capability

* Fast Intrinsic Diode

* Avalanche Rated

* Low RDS(on) Advantages

* High Power Density

* Easy to Mount

* Space Savings A

IXFN110N85X-IXYS.pdf