IXFN120N65X2 Datasheet - IXYS

IXFN120N65X2 Power MOSFET

Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN120N65X2 D G S S VDSS = ID25 = RDS(on)  650V 108A 24m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS,.

IXFN120N65X2 Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Isolation Voltage 2500 V~

* High Current Handling Capability

* Fast Intrinsic Diode

* Avalanche Rated

* Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS

IXFN120N65X2-IXYS.pdf

IXFN120N65X2 Datasheet Preview — Preview of IXFN120N65X2 PDF

Datasheet Details

Part number:

IXFN120N65X2

Manufacturer:

IXYS

File Size:

130.80 KB

Description:

Power mosfet.

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IXFN120N65X2 IXFN120N65X2 Power MOSFET IXYS

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