IXFN120N20 - Power MOSFET
HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 120N20 VDSS = ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L VISOL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 10
IXFN120N20 Features
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UI
