* Encapsulating epoxy meets UL 94 V-0, flammability classification
* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UI
IXFN120N20 Datasheet (202.81 KB)
IXFN120N20
IXYS
202.81 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 120N20
VDSS =
ID25 = = RDS(on)
200 .
📁 Related Datasheet
IXFN120N20P PolarHT Power MOSFET (IXYS)
IXFN120N65X2 Power MOSFET (IXYS)
IXFN100N10S1 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N10S2 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N10S3 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N20 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN100N25 N-Channel MOSFET (IXYS Corporation)
IXFN100N50P Power MOSFET (IXYS Corporation)
IXFN100N50Q3 HiperFET Power MOSFET Q3-Class (IXYS Corporation)
IXFN100N65X2 Power MOSFET (IXYS)
