IXFN120N20 Datasheet - IXYS

IXFN120N20 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 120N20 VDSS = ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L VISOL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 10.

IXFN120N20 Features

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* International standard package

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UI

IXFN120N20-IXYS.pdf