IXFN140N25T Datasheet - IXYS Corporation

IXFN140N25T GigaMOS HiperFET Power MOSFET

Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET IXFN140N25T VDSS ID25 = = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S 250V 120A 17mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL TL TSOLD Md www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ .

IXFN140N25T Features

* z z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 1.5/13 1.3/11.5 30 z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Terminal Connection Torque z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation High Current Handl

IXFN140N25T_IXYSCorporation.pdf