Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200.
Features
* International standard packages
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifie
Applications
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays
Symbol
Test Conditions
Characteristic Values (TJ = 25°C