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IXFN180N15P Datasheet - IXYS

IXFN180N15P PolarHT HiPerFET Power MOSFET

www.DataSheet4U.com PolarHTTM HiPerFET IXFN 180N15P Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS(on) trr = 150 V = 150 A ≤ 11 mΩ ≤ 200 ns Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md VISOL TL Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/.

IXFN180N15P Features

* International standard package

* Encapsulating epoxy meets UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect

* miniBLOC with Aluminium nitride l l l Symbol

IXFN180N15P_IXYS.pdf

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Datasheet Details

Part number:

IXFN180N15P

Manufacturer:

IXYS

File Size:

175.97 KB

Description:

Polarht hiperfet power mosfet.

IXFN180N15P Distributor

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IXFN180N15P IXFN180N15P PolarHT HiPerFET Power MOSFET IXYS