IXFN180N20 Datasheet - IXYS

IXFN180N20 Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDS.

IXFN180N20 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifi

IXFN180N20 Datasheet (154.72 KB)

IXFN180N20 Datasheet Preview — Preview of IXFN180N20 PDF

Datasheet Details

Part number:

IXFN180N20

Manufacturer:

IXYS

File Size:

154.72 KB

Description:

Power mosfets single die mosfet.

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IXFN180N20 Power MOSFETs Single Die MOSFET IXYS

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