IXFN36N100 Datasheet - ETC

IXFN36N100, Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR .

IXFN36N100_ETC.pdf

IXFN36N100 Datasheet Preview — Preview of IXFN36N100 PDF

Datasheet Details

Part number:

IXFN36N100

Manufacturer:

ETC

File Size:

122.63 KB

Description:

Power MOSFET

Features

* International standard packages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.0 ± 200 100 2 0.24 V V nA µA mA Ω
* Battery chargers Switched-mode and resonant-mode power supplie

IXFN36N100 Distributors

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IXFN36N100 Power MOSFET ETC

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