IXFN36N100 Power MOSFET

Description

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR .

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Datasheet Specifications

Part number: IXFN36N100
Manufacturer: ETC
File Size: 122.63 KB
Datasheet: IXFN36N100_ETC.pdf
Description: Power MOSFET

Features

* International standard packages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.0 ± 200 100 2 0.24 V V nA µA mA Ω
* Battery chargers Switched-mode and resonant-mode power supplie

IXFN36N100 Distributors

📁 Related Datasheet

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IXFN36N100 Power MOSFET ETC

ETC IXFN36N100-like datasheet