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IXFN30N110P - Polar Power MOSFET HiPerFET

IXYS Corporation

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Datasheet Details

Part number	IXFN30N110P
Manufacturer	IXYS Corporation
File Size	126.61 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFN30N110P_IXYSCorporation.pdf

IXFN30N110P Product details

Features

International standard package.
Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. UL 94 V-0, flammability classification.
miniBLOC with Aluminium nitride.

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Published: May 13, 2011 |