Part number:
IXFN30N110P
Manufacturer:
IXYS Corporation
File Size:
126.61 KB
Description:
Polar power mosfet hiperfet.
IXFN30N110P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFN30N110P
Manufacturer:
IXYS Corporation
File Size:
126.61 KB
Description:
Polar power mosfet hiperfet.
IXFN30N110P, Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 25A 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Maximum Ratings 1100 1100 ± 30 ± 40 25 75 15 1.5 20 695 -55 +150 150 -55 +150 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °
IXFN30N110P Features
* International standard package
* Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150
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