IXFN30N110P Datasheet - IXYS Corporation

IXFN30N110P, Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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IXFN30N110P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN30N110P

Manufacturer:

IXYS Corporation

File Size:

126.61 KB

Description:

Polar Power MOSFET HiPerFET

Features

* International standard package
* Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150

Applications

* z z z 50 μA 2.5 mA 360 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, A

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IXFN30N110P Polar Power MOSFET HiPerFET IXYS Corporation

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