IXFN30N110P Datasheet, Hiperfet, IXYS Corporation

IXFN30N110P Features

• Hiperfet
• International standard package
• Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Cont

PDF File Details

Part number:

IXFN30N110P

Manufacturer:

IXYS Corporation

File Size:

126.61kb

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📄 Datasheet

Description:

Polar power mosfet hiperfet.

IXFN30N110P Application

• Applications z z z 50 μA 2.5 mA 360 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications Hi

TAGS

IXFN30N110P

IXYS Corporation

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