IXFN300N20X3 Datasheet - IXYS

IXFN300N20X3 N-Channel Enhancement Power MOSFET

X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFN300N20X3 D G S S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torq.

IXFN300N20X3 Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Isolation Voltage 2500V~

* High Current Handling Capability

* Avalanche Rated

* Low RDS(on) Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mo

IXFN300N20X3 Datasheet (292.36 KB)

IXFN300N20X3 Datasheet Preview — Preview of IXFN300N20X3 PDF

Datasheet Details

Part number:

IXFN300N20X3

Manufacturer:

IXYS

File Size:

292.36 KB

Description:

N-channel enhancement power mosfet.

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IXFN300N20X3 N-Channel Enhancement Power MOSFET IXYS

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