IXFN36N60, IXFK32N60 Datasheet - IXYS

IXFN36N60 - HiPerFET Power MOSFET

IXFK 32N60 IXFK 36N60 Preliminary Data IXFN 32N60 www.DataSheet4U.com IXFN 36N60 ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns VDSS HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A TO-264 AA (IXFK) Symbol VDSS VDGR V GS VGSM I D25 I DM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMSt = 1 min IISOL ≤ 1 mAt = 1 s Mounting torque Terminal connection torque -55 30.

IXFN36N60 Features

* International standard packages

* JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (

IXFK32N60_IXYS.pdf