IXFN32N100P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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Datasheet Specifications

Part number: IXFN32N100P
Manufacturer: IXYS Corporation
File Size: 128.09 KB
Datasheet: IXFN32N100P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* z z z t = 1min t = 1s z z Mounting torque Terminal connection torque z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance

Applications

* z 50 μA 2.5 mA 320 mΩ z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls © 2008 IXYS CORPORATION, All rights reserved DS99880A(4/08) IXFN32N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified)

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IXFN32N100P Polar Power MOSFET HiPerFET IXYS Corporation

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