IXFN32N120P Datasheet - IXYS Corporation

IXFN32N120P Polar HiPerFET Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ±30 ±4.

IXFN32N120P Features

* z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z Mounting Torque Terminal Connection Torque www.DataSheet4U.net International Standard Package miniBLOC, with Aluminium Nitride Isolatio

IXFN32N120P_IXYSCorporation.pdf