IXFN32N120P Polar HiPerFET Power MOSFET

IXYS Corporation

Description

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ .

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Datasheet Specifications

Part number: IXFN32N120P
Manufacturer: IXYS Corporation
File Size: 139.30 KB
Datasheet: IXFN32N120P_IXYSCorporation.pdf
Description: Polar HiPerFET Power MOSFET

Features

* z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z Mounting Torque Terminal Connection Torque www. DataSheet4U. net International Standard Package miniBLOC, with Aluminium Nitride Isolatio

Applications

* z z VGS = 10V, ID = 0.5
* ID25, Note 1 310 mΩ z z z High Voltage Switch-Mode and Resonant-ModePower Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC Converters High Voltage DC-AC Inverters

IXFN32N120P Distributors

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IXFN32N60 IXFN320N17T2 IXFN300N20X3 IXFN36N100 IXFN36N60 IXFN100N65X2

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IXFN32N120P Polar HiPerFET Power MOSFET IXYS Corporation

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