Datasheet4U.com

IXFN320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET

IXYS

📥 Download Datasheet

IXFN320N17T2 Datasheet Preview — Preview of IXFN320N17T2 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXFN320N17T2
Manufacturer	IXYS
File Size	202.70 KB
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
Datasheet	IXFN320N17T2_IXYS.pdf

IXFN320N17T2 Product details

Features

International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density.

📁 IXFN320N17T2 Similar Datasheet

IXFN32N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFN32N120 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFN32N120P - Polar HiPerFET Power MOSFET (IXYS Corporation)
IXFN32N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFN300N10P - Power MOSFET (IXYS Corporation)
IXFN30N110P - Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFN30N120P - Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFN340N06 - Power MOSFET (IXYS Corporation)

Other Datasheets by IXYS

IXFN32N60 - HiPerFET Power MOSFET
IXFN300N20X3 - N-Channel Enhancement Power MOSFET
IXFN36N60 - HiPerFET Power MOSFET
IXFN100N65X2 - Power MOSFET
IXFN110N85X - Power MOSFET
IXFN120N20 - Power MOSFET

Published: Jul 5, 2010 |