IXFN340N06 Power MOSFET

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.

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Datasheet Specifications

Part number: IXFN340N06
Manufacturer: IXYS Corporation
File Size: 100.59 KB
Datasheet: IXFN340N06_IXYSCorporation.pdf
Description: Power MOSFET

Features

* International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Low package indu

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 3 V V nA mA mA mW DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID

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IXFN340N06 Power MOSFET IXYS Corporation

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