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IXFN34N80 Power MOSFET

IXFN34N80 Description

HiPerFETTM Power MOSFETs Single DieMOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 D VDSS =.

IXFN34N80 Features

* International standard packages
* miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 300 2500 3000 isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (U

IXFN34N80 Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 8 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
* ID25

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Datasheet Details

Part number
IXFN34N80
Manufacturer
IXYS Corporation
File Size
163.67 KB
Datasheet
IXFN34N80_IXYSCorporation.pdf
Description
Power MOSFET

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