IXFN34N80 Datasheet, Mosfet, IXYS Corporation

IXFN34N80 Features

• Mosfet
• International standard packages
• miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 300 2500 3000 isola

PDF File Details

Part number:

IXFN34N80

Manufacturer:

IXYS Corporation

File Size:

163.67kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXFN34N80 Application

• Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode VDSS VGS(th) IGSS IDSS RDS(on) VGS =

TAGS

IXFN34N80

IXYS Corporation

📁 Related Datasheet

IXFN34N100 - Power MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = .

IXFN340N06 - Power MOSFET (IXYS Corporation)
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.

IXFN340N07 - Power MOSFET (IXYS Corporation)
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM .

IXFN300N10P - Power MOSFET (IXYS Corporation)
PolarTM HiPerFETTM Power MOSFET IXFN300N10P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS I.

IXFN300N20X3 - N-Channel Enhancement Power MOSFET (IXYS)
X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFN300N20X3 D G S S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS .

IXFN30N110P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

IXFN30N120P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

IXFN320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
Advance Technical Information .. GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrins.

IXFN32N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

IXFN32N120 - HiPerFET Power MOSFETs (IXYS Corporation)
Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = .