* International standard packages
* miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s 300 2500 3000 isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (U
IXFN34N80 Datasheet (163.67 KB)
IXFN34N80
IXYS Corporation
163.67 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single DieMOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
IXFN 34N80
D
VDSS =.
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