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IXFN340N07 Power MOSFET

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Description

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM .

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Datasheet Specifications

Part number
IXFN340N07
Manufacturer
IXYS Corporation
File Size
104.62 KB
Datasheet
IXFN340N07_IXYSCorporation.pdf
Description
Power MOSFET

Features

* • International standard packages • miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 4 V V nA mA mA mW VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID

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