Datasheet Details
Part number:
IXFN34N100
Manufacturer:
IXYS Corporation
File Size:
133.13 KB
Description:
Power mosfet.
IXFN34N100_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFN34N100
Manufacturer:
IXYS Corporation
File Size:
133.13 KB
Description:
Power mosfet.
IXFN34N100, Power MOSFET
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.28W D G S S Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ£ 150°C, RG = 2 W TC= 25°C Maximum Ratings 1000 1000 ± 20 ± 30 34 136 34
IXFN34N100 Features
* International standard packages isolation miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier Applications DC-DC converters rated 50/60 Hz, RMS IISOL
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