IXFN30N120P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

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Datasheet Specifications

Part number: IXFN30N120P
Manufacturer: IXYS Corporation
File Size: 127.87 KB
Datasheet: IXFN30N120P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/

Applications

* z z nA z 50 μA 5 mA 350 mΩ VGS = 10V, ID = 0.5
* ID25, Note 1 z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Laser Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage

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IXFN30N120P Polar Power MOSFET HiPerFET IXYS Corporation

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