IXFN30N120P Datasheet - IXYS Corporation

IXFN30N120P, Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ.

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IXFN30N120P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN30N120P

Manufacturer:

IXYS Corporation

File Size:

127.87 KB

Description:

Polar Power MOSFET HiPerFET

Features

* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/

Applications

* z z nA z 50 μA 5 mA 350 mΩ VGS = 10V, ID = 0.5
* ID25, Note 1 z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Laser Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage

IXFN30N120P Distributors

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IXFN30N120P Polar Power MOSFET HiPerFET IXYS Corporation

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