IXFN30N120P Datasheet - IXYS Corporation

IXFN30N120P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN30N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 30A 350mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 30 7.

IXFN30N120P Features

* International standard package

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/

IXFN30N120P_IXYSCorporation.pdf