Datasheet4U Logo Datasheet4U.com

IXFN32N120 Datasheet - IXYS Corporation

IXFN32N120 HiPerFET Power MOSFETs

Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = 1200V = 32A = 0.35Ω D G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T.

IXFN32N120 Features

* International standard package

* miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectif

IXFN32N120_IXYSCorporation.pdf

Preview of IXFN32N120 PDF
IXFN32N120 Datasheet Preview Page 2 IXFN32N120 Datasheet Preview Page 3

Datasheet Details

Part number:

IXFN32N120

Manufacturer:

IXYS Corporation

File Size:

589.83 KB

Description:

Hiperfet power mosfets.

IXFN32N120 Distributor

📁 Related Datasheet

IXFN32N120P Polar HiPerFET Power MOSFET (IXYS Corporation)

IXFN32N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFN32N60 HiPerFET Power MOSFET (IXYS)

IXFN32N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFN320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFN300N10P Power MOSFET (IXYS Corporation)

IXFN300N20X3 N-Channel Enhancement Power MOSFET (IXYS)

IXFN30N110P Polar Power MOSFET HiPerFET (IXYS Corporation)

TAGS

IXFN32N120 IXFN32N120 HiPerFET Power MOSFETs IXYS Corporation