* International standard package
* miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectif
IXFN32N120 Datasheet (589.83 KB)
IXFN32N120
IXYS Corporation
589.83 KB
Hiperfet power mosfets.
Advanced Technical Data
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 32N120
VDSS ID25
RDS(on)
= .
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