IXFN32N120 HiPerFET Power MOSFETs

IXYS Corporation

Description

Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = .

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Datasheet Specifications

Part number: IXFN32N120
Manufacturer: IXYS Corporation
File Size: 589.83 KB
Datasheet: IXFN32N120_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs

Features

* International standard package
* miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectif

Applications

* DC-DC converters VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS(th) = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
* ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
* Battery chargers Switched-mod

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IXFN32N120 HiPerFET Power MOSFETs IXYS Corporation

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