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IXFN32N120 Datasheet - IXYS Corporation

IXFN32N120 HiPerFET Power MOSFETs

Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = 1200V = 32A = 0.35Ω D G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T.

IXFN32N120 Features

* International standard package

* miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectif

IXFN32N120 Datasheet (589.83 KB)

Preview of IXFN32N120 PDF

Datasheet Details

Part number:

IXFN32N120

Manufacturer:

IXYS Corporation

File Size:

589.83 KB

Description:

Hiperfet power mosfets.

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IXFN32N120 HiPerFET Power MOSFETs IXYS Corporation

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