Part number:
IXFN32N120
Manufacturer:
IXYS Corporation
File Size:
589.83 KB
Description:
Hiperfet power mosfets.
IXFN32N120_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFN32N120
Manufacturer:
IXYS Corporation
File Size:
589.83 KB
Description:
Hiperfet power mosfets.
IXFN32N120, HiPerFET Power MOSFETs
Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = 1200V = 32A = 0.35Ω D G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T
IXFN32N120 Features
* International standard package
* miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectif
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