IXFN300N10P Datasheet (IXYS Corporation)

IXFN300N10P, Power MOSFET

PolarTM HiPerFETTM Power MOSFET IXFN300N10P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL M d Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL  1mA Mounting

IXFN300N10P Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* Low RDS(on) and QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Co