IXFN360N10T Datasheet - IXYS Corporation

IXFN360N10T GigaMOS Trench HiperFET Power MOSFET

GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 360A 2.6mΩ 130ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD VISOL Md www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = .

IXFN360N10T Features

* z z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 Minute t = 1 Second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque International Standard Package 175°C Operating Temperature High Current Handling Capability Ava

IXFN360N10T_IXYSCorporation.pdf