IXFN360N10T GigaMOS Trench HiperFET Power MOSFET

IXYS Corporation

Description

GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = =.

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Datasheet Specifications

Part number: IXFN360N10T
Manufacturer: IXYS Corporation
File Size: 195.37 KB
Datasheet: IXFN360N10T_IXYSCorporation.pdf
Description: GigaMOS Trench HiperFET Power MOSFET

Features

* z z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 Minute t = 1 Second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque International Standard Package 175°C Operating Temperature High Current Handling Capability Ava

Applications

* z z z z z z z VGS = 10V, ID = 100A, Note 1 2.6 mΩ DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS100088A(10/09) IXF

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IXFN360N10T GigaMOS Trench HiperFET Power MOSFET IXYS Corporation

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