IXFN36N110P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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Datasheet Specifications

Part number: IXFN36N110P
Manufacturer: IXYS Corporation
File Size: 129.67 KB
Datasheet: IXFN36N110P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* International standard package
* Encapsulating epoxy meets 1.6mm (0.062 in. ) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/ 11.5 30 UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Fast re

Applications

* z z z VGS = 10V, ID = 0.5
* ID25, Note 1 z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2

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IXFN36N110P Polar Power MOSFET HiPerFET IXYS Corporation

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