Datasheet4U.com

IXFN36N110P - Polar Power MOSFET HiPerFET

IXYS Corporation

📥 Download Datasheet

IXFN36N110P Datasheet Preview — Preview of IXFN36N110P PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXFN36N110P
Manufacturer	IXYS Corporation
File Size	129.67 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFN36N110P_IXYSCorporation.pdf

IXFN36N110P Product details

Features

International standard package.
Encapsulating epoxy meets 1.6mm (0.062 in. ) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/ 11.5 30 UL 94 V-0, flammability classification.
miniBLOC with Aluminium nitride isolation.
Fast recovery diode.
Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque rated.
Low package inductance - easy to drive and to protect Advantages.
Easy.

📁 IXFN36N110P Similar Datasheet

IXFN36N100 - Power MOSFET (ETC)
IXFN36N60 - HiPerFET Power MOSFET (IXYS)
IXFN300N20X3 - N-Channel Enhancement Power MOSFET (IXYS)
IXFN320N17T2 - GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
IXFN32N60 - HiPerFET Power MOSFET (IXYS)
IXFN100N65X2 - Power MOSFET (IXYS)
IXFN110N85X - Power MOSFET (IXYS)
IXFN120N20 - Power MOSFET (IXYS)

Other Datasheets by IXYS Corporation

IXFN360N10T - GigaMOS Trench HiperFET Power MOSFET
IXFN360N15T2 - GigaMOS TrenchT2 HiperFET Power MOSFET
IXFN300N10P - Power MOSFET
IXFN30N110P - Polar Power MOSFET HiPerFET
IXFN30N120P - Polar Power MOSFET HiPerFET
IXFN32N100P - Polar Power MOSFET HiPerFET

Published: May 13, 2011 |