IXFN36N110P Datasheet - IXYS Corporation

IXFN36N110P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net IXFN36N110P VDSS = ID25 = RDS(on) ≤ ≤ trr 1100V 36A 240mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ±30 ±40 .

IXFN36N110P Features

* International standard package

* Encapsulating epoxy meets 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/ 11.5 30 UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride isolation

* Fast re

IXFN36N110P_IXYSCorporation.pdf