Datasheet Specifications
- Part number
- IXFN360N15T2
- Manufacturer
- IXYS Corporation
- File Size
- 197.98 KB
- Datasheet
- IXFN360N15T2_IXYSCorporation.pdf
- Description
- GigaMOS TrenchT2 HiperFET Power MOSFET
Description
Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN360N15T.
Applications
* 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGSIXFN360N15T2 Distributors
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