IXFN360N15T2 Datasheet - IXYS Corporation

IXFN360N15T2, GigaMOS TrenchT2 HiperFET Power MOSFET

Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN360N15T.

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Datasheet Details

Part number:

IXFN360N15T2

Manufacturer:

IXYS Corporation

File Size:

197.98 KB

Description:

GigaMOS TrenchT2 HiperFET Power MOSFET

Applications

* 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS

IXFN360N15T2 Distributors

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IXFN360N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET IXYS Corporation

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