IXFK48N50Q Datasheet - ETC

IXFK48N50Q Power MOSFET

HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data VDSS ID25 RDS(on) IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW trr £ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions 0.4/6 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RG.

IXFK48N50Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Rated for unclamped Inductive load switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammabi

IXFK48N50Q_ETC.pdf

IXFK48N50Q Datasheet Preview — Preview of IXFK48N50Q PDF

Datasheet Details

Part number:

IXFK48N50Q

Manufacturer:

ETC

File Size:

48.21 KB

Description:

Power mosfet.

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