* Internationalstandardpackages
* Low R HDMOSTM process DS (on)
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Applications
IXFK48N55 Datasheet (46.76 KB)
IXFK48N55
IXYS
46.76 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Single MOSFET Die Avalanche Rated
IXFK 48N55 IXFX 48N55
VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW
trr £ 250 ns
Preliminary .
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