IXFK44N60 Datasheet - IXYS Corporation

IXFK44N60 - Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 44N60 IXFK 44N60 VDSS ID25 RDS(on) = 600 V = 44 A = 130 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 600 600 ±20 ±30 44 176 44 60 3 5 560 -.

IXFK44N60 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Symbol Test Condi

IXFK44N60_IXYSCorporation.pdf