* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Symbol Test Condi
IXFK44N60 Datasheet (104.55 KB)
IXFK44N60
IXYS Corporation
104.55 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 44N60 IXFK 44N60
VDSS ID25
RDS(on)
= 600 V = 44 A = 130 mW
trr £ 250 ns
Symbol VDSS VDGR VGS VGSM.
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